Samsung to use ASML High-NA EUV for DRAM by 2028
Samsung plans to deploy ASML’s top-end lithography system for DRAM production by 2028, while TSMC targets the most advanced system for leading-edge nodes from 2030.
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Samsung plans to deploy ASML’s top-end lithography system for DRAM production by 2028, while TSMC targets the most advanced system for leading-edge nodes from 2030.