Renesas Electronics Corporation Launches Dual-Side Cooled 650V GaN For 800V AI Data Centers

Renesas introduced a 650V GaN device in a dual-side cooled 8x8mm PQFN package for 800V HVDC AI data center power stages, now sampling with mass production planned for mid-2027.Material DetailsContext by AI AnalystThis is an early-stage product launch aligned with surging AI data center power demand…