Samsung to bring ASML High-NA EUV into DRAM production by 2028
Samsung plans to use ASML High-NA EUV in future high-volume DRAM manufacturing by 2028, aiming for an industry first. Samsung is also moving from 6-inch to 12-inch semiconductor photomasks for better fab productivity and lower costs.
Samsung plans to use ASML’s High-NA EUV in future high-volume DRAM manufacturing by 2028, a move the companies said would be an industry first. Samsung is also joining an effort to shift semiconductor photomasks from the industry-standard 6-inch format to 12 inches, with the aim of improving fab productivity, lowering manufacturing costs and removing stitching constraints in High-NA EUV production. The broader partnership covers advanced memory and next-generation semiconductor manufacturing.